Confinement-enhanced electron transport across a metal-semiconductor interface

We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well

Field Ionization of Cold Atoms near the Wall of a Single Carbon Nanotube

We observe the capture and field ionization of individual atoms near the side wall of a single suspended nanotube. Extremely large cross sections for ionization from an atomic beam are observed at modest voltages due to the nanotube's small radius and extended length. The effects of the field strength on both the atomic capture and the ionization process are clearly distinguished in the data, as are prompt and delayed ionizations related to the locations at which they occur. Efficient and sensitive neutral atom detectors can be based on the nanotube capture and wall ionization processes.Comment: Article (8 pages) and Supplementary Information (4 pages). Associated figure appeared on cover of the April 2, 2010 issue of PRL

Tunable Nanometer Electrode Gaps by MeV Ion Irradiation

We report the use of MeV ion-irradiation-induced plastic deformation of amorphous materials to fabricate electrodes with nanometer-sized gaps. Plastic deformation of the amorphous metal $\text{Pd}_{80}\text{Si}_{20}$ is induced by $4.64 \text{MeV O}^{2+}$ ion irradiation, allowing the complete closing of a sub-micrometer gap. We measure the evolving gap size in situ by monitoring the field emission current-voltage (I-V) characteristics between electrodes. The I-V behavior is consistent with Fowler-Nordheim tunneling. We show that using feedback control on this signal permits gap size fabrication with atomic-scale precision. We expect this approach to nanogap fabrication will enable the practical realization of single molecule controlled devices and sensors.Engineering and Applied SciencesPhysic

Качественный анализ финансового состояния предприятия – основа его стабильного развития

В даній статті обґрунтовується важливість оцінки фінансового стану підприємства для його стабільного розвитку в умовах ринкової економіки. Розглядається аналіз фінансової діяльності підприємства його методи та прийоми, що допомагають визначити резерви подальшого підвищення ринкової вартості підприємства та забезпечення його ефективного функціонування.In this article the importance of assessing the financial condition of the company for its sustainable development in a market economy. An analysis of the financial activity of its methods and techniques that help determine the reserves further increase the market value of the enterprise and ensure its effective functioning.В данной статье обосновывается важность оценки финансового состояния предприятия для его стабильного развития в условиях рыночной экономики. Рассматривается анализ финансовой деятельности предприятия и его методы и приемы, помогающие определить резервы дальнейшего повышения рыночной стоимости предприятия и обеспечения его эффективного функционирования

Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators

We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO$_2$ and SiN), semiconductors (a-Si), and metallic glasses (Pd$_{80}$Si$_{20}$) — the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.Engineering and Applied SciencesPhysic

X-Ray Evanescent-Wave Absorption and Emission

The presence and properties of x-ray evanescent waves are demonstrated detecting their absorption and their excitation in the vicinity of a target surface. The role of microscopic reversibility in relating the two cases is discussed and practical applications of the phenomena to probe interfaces are suggested.Physic